P4NB80 View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
P4NB80 Datasheet PDF : 9 Pages
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STP4NB80/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on delay Time
Rise Time
Test Conditions
VDD = 400 V ID = 2 A
RG = 4.7 Ω
VGS = 10 V
Qg
Total Gate Charge
VDD = 640 V ID = 4 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640V ID = 4 A
RG = 4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD =4 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 4 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
14
8
Max.
20
12
Unit
ns
ns
21
29
nC
7
nC
9
nC
Min.
Typ.
12
9
16
Max.
17
13
22
Unit
ns
ns
ns
Min.
Typ.
Max.
4
16
Unit
A
A
1.6
V
600
ns
3.3
µC
11
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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