IRF530N View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
IRF530N Datasheet PDF : 10 Pages
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IRF530N
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BV DSS
I DSS
I GSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 95V, VGS = 0V
VDS = 90V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
V GS(TH)
r DS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 22A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
R θ JA
TO-220
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
t ON
Turn-On Delay Time
t d(ON)
Rise Time
tr
Turn-Off Delay Time
t d(OFF)
Fall Time
tf
Turn-Off Time
t OFF
GATE CHARGE SPECIFICATIONS
VDD = 50V, ID = 22A
VGS = 10V,
RGS = 13Ω
(Figures 18, 19)
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
CAPACITANCE SPECIFICATIONS
Q g(TOT)
Q g(10)
Q g(TH)
Q gs
Q gd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V,
ID = 22A,
Ig(REF) = 1.0mA
(Figures 13, 16, 17)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V SD
Reverse Recovery Time
Reverse Recovered Charge
t rr
Q RR
TEST CONDITIONS
ISD = 22A
ISD = 11A
ISD = 22A, dISD/dt = 100A/µs
ISD = 22A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
100
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100 nA
2
-
4
V
-
0.054 0.064
Ω
-
-
1.76 oC/W
-
-
62
oC/W
-
-
75
ns
-
7.9
-
ns
-
42
-
ns
-
47
-
ns
-
39
-
ns
-
-
130
ns
-
43
52
nC
-
23
28
nC
-
1.7
2
nC
-
3.5
-
nC
-
8.7
-
nC
-
790
-
pF
-
215
-
pF
-
70
-
pF
MIN TYP MAX UNITS
-
-
1.25
V
-
-
1.00
V
-
-
100
ns
-
-
313
nC
©2002 Fairchild Semiconductor Corporation
IRF530N Rev. B
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