BSS138W View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
BSS138W Datasheet PDF : 7 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics.
2.0
V = 10V
GS
1.5
6V
4.5V
3.5V
1.0
3V
0.5
2.5V
2V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V . Drain-Source Voltage (V)
DS
Figure 3. On-Resistance Variation with
Temperature.
2.5
V = 10V
GS
I = 220 mA
D
2.0
1.5
1.0
0.5
-50
0
50
100
150
T . Junction Temperature (oC)
J
Figure 5. Drain-Source On Voltage with
Temperature.
2.0
V = 10V
GS
1.6
T = 125(oC)
A
1.2
0.8
T = 25(oC)
A
0.4
T = -55(oC)
A
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
I . Drain Current (A)
D
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
3.5
3.0
2.5
2.0
V = 2.5V
GS
3V
4.5V
4V
3.5V
1.5
1.0
0.5
0.0
6V
10V
0.2
0.4
0.6
0.8
1.0
I . Drain-Source Current(A)
D
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
4.0
I = 110 mA
D
3.5
3.0
T = 125oC
A
2.5
2.0
1.5
1.0
T = 25oC
A
0.5
0.0
0
2
4
6
8
10
V . Gate to Source Voltage(V)
GS
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
1000
V =0V
GS
100
T =150oC
A
10
T =25oC
A
1
T =-55oC
A
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD. Body Diode Forward Voltage [V]
© 2010 Fairchild Semiconductor Corporation
BSS138W Rev. A0
3
www.fairchildsemi.com
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