ADS6616A4A View Datasheet(PDF) - A-Data Technology

Part Name

Description

Manufacturer

ADS6616A4A

Synchronous DRAM 1M x 16 Bit x 4 Banks

A-Data Technology 

A-Data

Synchronous DRAM

ADS6616A4A

1M x 16 Bit x 4 Banks

General Description

The ADS6616A4A are four-bank Synchronous

DRAMs organized as 1,048,576 words x 16 bits x 4

banks,

Synchronous design allows precise cycle control

with the use of system clock I/O transactions are

possible on every clock cycle.

Range of operating frequencies, programmable

burst length and programmable latencies allow the

same device to be useful for a variety of high

bandwidth high performance memory system

applications

Features

•JEDEC standard LVTTL 3.3V power supply

•MRS Cycle with address key programs

-CAS Latency (2 & 3)

-Burst Length (1,2,3,8,& full page)

-Burst Type (sequential & Interleave)

•4 banks operation

•All inputs are sampled at the positive edge of

the system clock

•Burst Read single write operation

•Auto & Self refresh

•4096 refresh cycle

•DQM for masking

•Package:54-pins 400 mil TSOP-Type II

Ordering Information.

Part No.

ADS6616A4A-5

ADS6616A4A-6

ADS6616A4A-7

ADS6616A4A-7.5

Pin Assignment

Frequency

200Mhz

166Mhz

143Mhz

133Mhz

VDD

DQ0

VDDQ

DQ1

DQ2

VSS

DQ3

DQ4

VDDQ

DQ5

DQ6

VSSQ

DQ7

VDD

LDQM

/WE

/CAS

/RAS

/CS

BA0

BA1

A10/AP

A0

A1

A2

A3

VDD

Interface

LVTTL

LVTTL

LVTTL

LVTTL

Package

400mil 54pin TSOPII

400mil 54pin TSOPII

400mil 54pin TSOPII

400mil 54pin TSOPII

1

54

Vss

2

53

DQ15

3

52

VssQ

4

51

DQ14

5

50

DQ13

6

49

VDDQ

7

48

DQ12

8

47

DQ11

9

46

VSSQ

10

45

DQ10

11

44

DQ9

12

43

VDDQ

13

42

DQ8

14

41

VSS

15

40

NC

16

39

UDQM

17

38

CLK

18

37

CKE

19

36

NC

20

35

A11

21

34

A9

22

33

A8

23

32

A7

24

31

A6

25

30

A5

26

29

A4

27

28

VSS

54-pin plastic TSOP II 400 mil

Rev 1.1 April, 2001

1

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