15N60 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
15N60 Datasheet PDF : 6 Pages
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15N60
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
600
V
1 µA
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
2.0
4.0 V
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=7.5A
0.65 Ω
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
2600
pF
COSS VDS=25V,VGS=0V,f=1.0MHz
260
pF
Reverse Transfer Capacitance
CRSS
22
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=50V, VGS=10V, ID=1.3A,
IG = 100μA (Note 1, 2)
155
14
28
nC
nC
nC
Turn-ON Delay Time (Note 1)
tD(ON)
105
ns
Turn-ON Rise Time
Turn-OFF Delay Time
tR
VDD =30V, VGS=10V, ID =0.5A,
115
ns
tD(OFF) RG=25Ω (Note 1, 2)
600
ns
Turn-OFF Fall Time
tF
120
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
15 A
Maximum Body-Diode Pulsed Current (Note 1)
ISM
60 A
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS =15A, VGS=0V
1.4 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
IS =15A, VGS=0V,
Qrr
dIF/dt=100A/μs (Note 1)
510
ns
8.2
μC
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-485.H
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