2N7002KL-AE2-R(2012) View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2N7002KL-AE2-R Datasheet PDF : 3 Pages
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2N7002K
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
60
V
±20
V
Drain Current
Continuous
Pulse(Note 2)
ID
300
mA
800
Power Dissipation
Derating above TA=25°C
350
mW
PD
2.8
mW/°C
Junction Temperature
Storage Temperature
TJ
TSTG
+150
°C
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=10µA
60
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
DYNAMIC PARAMETERS
VGS(TH)
RDS(ON)
VDS=10V, ID=1mA
VGS=10V, ID=300m A
VGS=4.5V, ID=200mA
1.0 1.85
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
CISS
25
COSS VDS=25V, VGS=0V, f=1.0MHz
10
CRSS
3.0
Turn-ON Delay Time
tD(ON) ID=0.2 A, VDD=30V, VGS=10V,
12
Turn-OFF Delay Time
tD(OFF) RL=150Ω, RG=10Ω
20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, Is=300mA (Note )
0.88
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Maximum Continuous Drain-Source Diode
Forward Current
Is
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse width≦300μs, Duty cycle≦1%
MAX UNIT
V
1.0 µA
±10 µA
2.5 V
2
Ω
4
50 pF
25 pF
5.0 pF
20 ns
30 ns
1.5 V
0.8 A
300 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-541.b
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