2SD1710 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SD1710

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0

VCEsat Collector-emitter saturation voltage IC=4.5A;IB=2A

VBEsat Base-emitter saturation voltage

IC=4.5A;IB=2A

IEBO

Emitter cut-off current

ICBO

Collector cut-off current

ICES

Collector cut-off current

VEB=4V; IC=0

VCB=800V; IE=0

VCE=1500V; RBE=0

hFE

DC current gain

IC=0.5 A ; VCE=5V

Product Specification

2SD1710

MIN TYP. MAX UNIT

800

V

5.0

V

1.5

V

0.1 mA

10

μA

1.0 mA

10

40

2

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