2SD905 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SD905

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞

V(BR)EBO Emitter-base breakdown voltage

IE=10mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=8A;IB=1.5A

VBEsat Base-emitter saturation voltage

IC=8A;IB=1.5A

ICES

Collector cut-off current

VCE=1400V ; RBE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

tf

Fall time

IC=6.8A; IB1=1.1A;LB=0

Product Specification

2SD905

MIN TYP. MAX UNIT

650

V

5

V

10

V

1.5

V

0.5

mA

0.5

mA

8

36

1.0

μs

2

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