5N90G-TA3-R View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
5N90G-TA3-R Datasheet PDF : 7 Pages
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5N90
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
900
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
VDS=720V, TC=125°C
Gate-Source Leakage Current
Forward
Reverse
IGSS
VDS=0V ,VGS=30V
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(TH) VDS=VGS, ID=250µA
3.0
RDS(ON) VGS=10V, ID=2.5A
gFS
VDS=50V, ID=2.5A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V, f=1.0MHz
IG=3.3mA
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=120V, VGS=10V, ID=5A
(Note 1,2)
VDD=30V, ID=1A, RG=25Ω
(Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =5A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
VGS=0V, IS=5.4A,
QRR dIF/dt=100A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
TYP MAX UNIT
V
1.0
V/°C
10 µA
100 µA
100 nA
-100 nA
5.0 V
2.0 2.8 Ω
4.0
S
1200 1550 pF
110 145 pF
13 17 pF
140 160 nC
12
nC
30
nC
70 90 ns
106 140 ns
196 220 ns
110 130 ns
5
A
12 A
1.4 V
610
ns
5.26
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R502-499.H
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