7MBR10NE120 View Datasheet(PDF) - Fuji Electric

Part Name

Description

Manufacturer

7MBR10NE120

IGBT MODULE 1200V / 10A / PIM

Fuji Electric 

IGBT Module

7MBR10NE120

Electrical characteristics (Tj=25°C unless without specified)

Item

Symbol

Condition

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Collector-Emitter voltage

Input capacitance

Switching time

Reverse recovery time of FRD

Zero gate voltage collector current

Gate-Emitter leakage current

Collector-Emitter saturation voltage

Switching time

Reverse current

Reverse recovery time

Forward voltage

Reverse current

ICES

IGES

VGE(th)

VCE(sat)

-VCE

Cies

ton

tr

toff

tf

trr

ICES

IGES

VCE(sat)

ton

tr

toff

tf

IRRM

trr

VFM

IRRM

VCE=1200V, VGE=0V

VCE=0V, VGE=±20V

VCE=20V, IC=10mA

VGE=15V, Ic=10A

-Ic=10A

VGE=0V, VCE=10V, f=1MHz

VCC=600V

IC=10A

VGE=±15V

RG=62 ohm

IF=10A

VCES=1200V, VGE=0V

VCE=0V, VGE=±20V

IC=5A, VGE=15V

VCC=600V

IC=5A

VGE=±15V

RG=120 ohm

VR=1200V

IF=25A

VR=1600V

Characteristics

Unit

Min.

Typ.

Max.

1.0 mA

0.1 µA

4.5

7.5 V

3.3 V

2100

3.0 V

pF

1.2 µs

0.6 µs

1.5 µs

0.5 µs

0.35 µs

1.0 mA

0.1 µA

3.55 V

0.8 µs

0.6 µs

1.5 µs

0.5 µs

1

mA

0.6 µs

1.4 V

1.0 mA

Thermal Characteristics

Item

Symbol

Condition

Inverter IGBT

Thermal resistance ( 1 device )

Rth(j-c)

Inverter FRD

Brake IGBT

Converter Diode

Contact thermal resistance *

Rth(c-f)

With thermal compound

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Min.

Characteristics

Typ.

Max.

1.67

3.30

3.12

3.40

0.05

Unit

°C/W

Equivalent Circuit Schematic

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