BSP615S2L View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BSP615S2L Datasheet PDF : 8 Pages
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9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 1.4 A, VGS = 10 V
BSP615S2L
280
mΩ
240
220
200
180
160
140
120
98%
100
80
typ
60
40
20
0
-60 -20 20
60 100 °C
180
Tj
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 3
pF
Ciss
BSP615S2L
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
2.5
V
60 µA
1.5
12 µA
1
0.5
0
-60
-20
20
60
100 °C 160
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 2 BSP615S2L
A
10 1
10 2
10 1
0
Coss
Crss
5
10
15
20
V
30
VDS
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
Page 6
2003-10-29
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