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Part Name
Description
BSP615S2L View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BSP615S2L
OptiMOS Power-Transistor
Infineon Technologies
BSP615S2L Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
13 Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D
= 2.8 A pulsed
BSP615S2L
16
V
BSP615S2L
14 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
parameter:
I
D
=10 mA
BSP615S2L
66
V
12
10
0,2
V
DS max
0,8
V
DS max
8
6
4
2
0
0
2
4
6
8
nC
12
Q
Gate
62
60
58
56
54
52
50
-60 -20
20
60 100
°C
180
T
j
Page 7
2003-10-29
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