G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Absolute Maximum Ratings*
Capacitance*
TA=25°C, VCC=5V±10%, VSS=0V
Operating Temperature, TA (ambient)
Symbol
Parameter
.......................................-0°C to +70°C
Storage Temperature(plastic)....-55°C to +150°C CIN1 Address Input
Voltage Relative to VSS...............-1.0V to + 7.0V
Short Circuit Output Current......................50mA
Power Dissipation......................................1.0W
CIN2
COUT
RAS , CAS , UW , LW , OE
Data Input/Output
Max. Unit
5 pF
7 pF
7 pF
*Note: Operation above Absolute Maximum Ratings *Note: Capacitance is sampled and not 100% tested
can adversely affect device reliability.
Electrical Specifications
l WE means UW and LW .
l All voltages are referenced to GND.
l After power up, wait more than 100µs and then, execute eight CAS -before- RAS or RAS -only
refresh cycles as dummy cycles to initialize internal circuit.
Block Diagram :
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-3-
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.