IS42S16400A-7T View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS42S16400A-7T

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution 

IS42S16400A

ISSI ®

OPERATING FREQUENCY / LATENCY RELATIONSHIPS

SYMBOL PARAMETER

-6

-7

—

Clock Cycle Time

6

7

—

Operating Frequency

166

133

tCCD

READ/WRITE command to READ/WRITE command

1

1

tCKED

CKE to clock disable or power-down entry mode

1

1

tPED

CKE to clock enable or power-down exit setup mode

1

1

tDQD

DQM to input data delay

0

0

tDQM

DQM to data mask during WRITEs

0

0

tDQZ

DQM to data high-impedance during READs

2

2

tDWD

WRITE command to input data delay

0

0

tDAL

Data-in to ACTIVE command

5

5

tDPL

Data-in to PRECHARGE command

2

2

tBDL

Last data-in to burst STOP command

1

1

tCDL

Last data-in to new READ/WRITE command

1

1

tRDL

Last data-in to PRECHARGE command

2

2

tMRD

LOAD MODE REGISTER command

to ACTIVE or REFRESH command

2

2

tROH

Data-out to high-impedance from

PRECHARGE command

CL=3

3

CL=2

2

-10

Units

10

ns

100

MHz

1

cycle

1

cycle

1

cycle

0

cycle

0

cycle

2

cycle

0

cycle

4

cycle

2

cycle

1

cycle

1

cycle

2

cycle

2

cycle

3

cycle

2

cycle

AC TEST CONDITIONS (Input/Output Reference Level: 1.4V)

Input Load

Output Load

2.8V

CLK 1.4V

0.2V

2.8V

INPUT 1.4V

0.2V

OUTPUT

tCK

tCHI

tCL

tCS tCH

tAC

tOH

1.4V

1.4V

I/O

50 Ω

50 pF

+1.4V

14

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev.C

04/16/03

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