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M48T212A-85MH6 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M48T212A-85MH6
ST-Microelectronics
STMicroelectronics 
M48T212A-85MH6 Datasheet PDF : 20 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
M48T212A
POWER SUPPLY DECOUPLING
AND UNDERSHOOT PROTECTION
Note: ICC transients, including those produced by
output switching, can produce voltage fluctua-
tions, resulting in spikes on the VCC bus. These
transients can be reduced if capacitors are used to
store energy, which stabilizes the VCC bus. The
energy stored in the bypass capacitors will be re-
leased as low going spikes are generated or ener-
gy will be absorbed when overshoots occur.
A ceramic bypass capacitor value of 0.1µF is rec-
ommended in order to provide the needed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on VCC that drive it to values
below VSS by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode.
To protect from these voltage spikes, ST recom-
mends connecting a schottky diode from VCC to
VSS (cathode connected to VCC, anode to VSS).
(Schottky diode 1N5817 is recommended for
through hole and MBRS120T3 is recommended
for surface mount).
Figure 13. Supply Voltage Protection
VCC
0.1µF
VCC
DEVICE
VSS
AI02169
17/20

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