MTB23P06E View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

Manufacturer

MTB23P06E

TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

Motorola => Freescale 

MTB23P06E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

—

—

Vdc

—

—

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IDSS

IGSS

µAdc

—

—

100

—

—

1000

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

2.8

4.0

Vdc

—

3.1

—

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 11.5 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 23 Adc)

(ID = 11.5 Adc, TJ = 125°C)

Forward Transconductance (VDS = 8.0 Vdc, ID = 11.5 Adc)

RDS(on)

VDS(on)

gFS

—

0.094

0.12

Ohm

Vdc

—

2.21

3.3

—

—

3.0

5.0

—

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

Coss

Crss

—

1357

1900

pF

—

600

840

—

200

400

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(See Figure 8)

(VDD = 30 Vdc, ID = 23 Adc,

VGS = 10 Vdc,

RG = 10 Ω)

(VDS = 48 Vdc, ID = 23 Adc,

VGS = 10 Vdc)

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

—

18

36

ns

—

140

280

—

76

152

—

69

138

—

75

105

nC

—

9.0

—

—

37

—

—

27

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 23 Adc, VGS = 0 Vdc)

(IS = 23 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

Vdc

—

2.2

3.5

—

1.85

—

Reverse Recovery Time

(See Figure 14)

Reverse Recovery Stored Charge

(IS = 23 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

ta

tb

QRR

—

120

—

ns

—

—

—

—

—

—

—

600

—

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

LD

nH

—

3.5

—

—

4.5

—

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

—

7.5

—

nH

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

2

Motorola TMOS Power MOSFET Transistor Device Data

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