NE5550779A-T1A View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

NE5550779A-T1A

Silicon Power LDMOS FET

Renesas Electronics 

NE5550779A

TEST CIRCUIT SCHEMATIC FOR 157 MHz

VGS

VDS

IN

50 Ω C10

L10

C11

C12

R1

C1

L1

C1

C20

NE5550779A

L20

C21 C22

OUT

C23 50 Ω

COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS

Symbol

C1

C10

C11

C12

C20

C21

C22

C23

R1

<R>

L1

L10

L20

PCB

SMA Connecter

Value

1 μF

100 pF

5.6 pF

39 pF

22 pF

68 pF

15 pF

100 pF

5.1 kΩ

74.7 nH

27 nH

29.8 nH

−

−

Type

GRM31MB11E105KA01

GQM1882C1H101JB01

GQM1882C2A5R6DB01

GQM1882C1H390JB01

GRM1882C1H220JA01

GQM1882C1H680JB01

GQM1882C1H150JA01

GQM1882C1H101JB01

1/10 W Chip Resistor

MCR03J103

φ 0.4 mm, φ D = 2 mm, 10 Turns

LLQ2012-F27N

φ 0.4 mm, φ D = 2 mm, 5 Turns

R1766, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm

WAKA 01K0790-20

Maker

Murata

Murata

Murata

Murata

Murata

Murata

Murata

Murata

ROAM

Ohesangyou

Toko

Ohesangyou

Panasonic

WAKA

R09DS0040EJ0300 Rev.3.00

Mar 12, 2013

Page 6 of 15

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