NID6002N View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NID6002N

Self−Protected FET with Temperature and Current Limit

ON Semiconductor 

NID6002N

MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage Internally Clamped

Gate−to−Source Voltage

Drain Current

Total Power Dissipation

@ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

Thermal Resistance

Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

Single Pulse Drain−to−Source Avalanche Energy

(VDD = 50 Vdc, VGS = 5.0 Vdc,

IL = 1.3 Apk, L = 160 mH, RG = 25 W)

Operating and Storage Temperature Range

(Note 3)

Continuous

VDSS

VGS

ID

PD

RqJC

RqJA

RqJA

EAS

TJ, Tstg

70

Vdc

"14

Vdc

Internally Limited

W

1.3

2.5

°C/W

3.0

95

50

143

mJ

−55 to 150

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu.

2. Mounted onto 1″ square pad size (700 sq/mm) FR4 PCB, 1 oz cu.

3. Normal pre−fault operating range. See thermal limit range conditions.

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