PBHV9115T View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PBHV9115T Datasheet PDF : 13 Pages
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NXP Semiconductors
PBHV9115T
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = −120 V; IE = 0 A
current
VCB = −120 V; IE = 0 A;
Tj = 150 °C
ICES
collector-emitter
VCE = −120 V; VBE = 0 A
cut-off current
IEBO
emitter-base cut-off VEB = −4 V; IC = 0 A
current
hFE
VCEsat
VBEsat
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
VCE = −10 V
IC = −50 mA
IC = −100 mA
IC = −1 A
IC = −100 mA; IB = −10 mA
IC = −100 mA; IB = −20 mA
IC = −500 mA;
IB = −100 mA
IC = −1 A; IB = −200 mA
fT
transition frequency VCE = −10 V; IE = −10 mA;
f = 100 MHz
Cc
collector capacitance VCB = −20 V; IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance VEB = −0.5 V; IC = ic = 0 A;
f = 1 MHz
td
delay time
tr
rise time
VCC = −6 V; IC = −0.5 A;
IBon = −0.1 A; IBoff = 0.1 A
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
Min
-
-
-
-
100
100
[1] 10
-
-
-
[1] -
-
-
-
-
-
-
-
-
-
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Typ Max Unit
-
−100 nA
-
−10 µA
-
−100 nA
-
−100 nA
220 -
220 -
30 -
−60 −120 mV
−50 −100 mV
−150 −300 mV
−1.05 −1.2 V
115 -
MHz
10 -
pF
150 -
pF
8
-
ns
282 -
ns
290 -
ns
430 -
ns
300 -
ns
730 -
ns
PBHV9115T_2
Product data sheet
Rev. 02 — 9 January 2009
© NXP B.V. 2009. All rights reserved.
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