R6015FNX(2011) View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
R6015FNX Datasheet PDF : 7 Pages
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R6015FNX
Electrical characteristics (Ta = 25C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
-
Drain-source breakdown voltage V(BR)DSS 600
Zero gate voltage drain current
IDSS
-
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
3
RDS (on*)
-
Forward transfer admittance
l Yfs l* 4.5
Input capacitance
Ciss
-
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
-
Turn-on delay time
td(on) *
-
Rise time
tr *
-
Turn-off delay time
td(off) *
-
Fall time
tf *
-
Total gate charge
Qg *
-
Gate-source charge
Qgs *
-
Gate-drain charge
Qgd *
-
*Pulsed
Typ.
-
-
-
-
0.27
-
1660
1110
45
38
45
120
35
42
12
20
Max.
100
-
100
5
0.35
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
nA VGS=±30V, VDS=0V
V ID=1mA, VGS=0V
A VDS=600V, VGS=0V
V VDS=10V, ID=1mA
ID=7.5A, VGS=10V
S ID=7.5A, VDS=10V
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns ID=7.5A, VDD 300V
ns VGS=10V
ns RL=40
ns RG=10
nC ID=15A,
nC VDD 300V
nC VGS=10V
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
Reverse Recovery Time
VSD *
-
-
trr *
60
90
*Pulsed
Max.
1.5
120
Unit
V
ns
Conditions
Is=15A, VGS=0V
Is=15A, di/dt=100A/s
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.08 - Rev.A
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