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Part Name
Description
SPD23N05 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
SPD23N05
SIPMOS ® Power Transistor
Siemens AG
SPD23N05 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
SPD23N05
SPU23N05
Avalanche energy
E
AS
=
f
(
T
j
)
parameter:
I
D
=22A,
V
DD
=25 V
R
GS
=25
Ω
, L = 372µH
100
mJ
E
AS
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 °C 180
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
Æ’
(
T
j
)
Typ. gate charge
V
GS
=
Æ’
(
Q
Gate
)
parameter:
I
D puls
= 22 A
16
V
V
GS
12
10
0,2
V
DS max
0,8
V
DS max
8
6
4
2
0
0
4
8
12
16
nC
24
Q
Gate
65
V
V
(BR)DSS
61
59
57
55
53
51
49
-60
-20
20
60 100 °C 180
T
j
Semiconductor Group
8
29/Jan/1998
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