ST333C08CEM2P View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

ST333C08CEM2P

Inverter Grade Thyristors (Hockey PUK Version), 720 A

Vishay Semiconductors 

ST333CPbF Series

Vishay High Power Products Inverter Grade Thyristors

(Hockey PUK Version), 720 A

320

300

ITM = 500 A

300 A

280

200 A

260

100 A

50 A

240

220

200

180

160

140

120

ST333C..C Series

TJ = 125 °C

100

80

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of On-state Current - di/ dt (A/ µs)

Fig. 11 - Reverse Recovered Charge Characteristics

180

ITM = 500 A

160

300 A

200 A

140

100 A

50 A

120

100

80

60

ST333C..C Series

TJ = 125 °C

40

20

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of Forward Current - di/ dt (A/ µs)

Fig. 12 - Reverse Recovered Current Characteristics

1E4

1E3

1E2

1E1

1000

1500

2500

3000

5000

500 400 200 100 50 Hz

Snubb er circ uit

R s = 10 ohms

C s = 0.47 µF

V D = 80% VDRM

ST333C..C Series

Sinusoid a l pulse

tp

TC = 40°C

500 400 200 100 50 Hz

1000

1500

2500

3000

Snub b er c irc uit

Rs = 10 ohms

Cs = 0.47 µF

VD = 80%V DRM

5000

ST333C..C Series

Sinusoida l pulse

tp

TC = 55°C

1E2

1E3

1E4

Pulse Basewid th (µs)

1E1

1E2

1E3

1E4

Pulse Basewidth (µs)

Fig. 13 - Frequency Characteristics

1E4

1E3

1E2

1E1

400 200 100 50 Hz

1000 500

1500

2000

2500

3000

Snub b er circuit

Rs = 10 ohms

Cs = 0.47 µF

V D = 80%VDRM

5000

ST333C..C Series

Tra pezoida l pulse

TC = 40°C

tp

di/ dt = 50A/ µs

Snub ber c irc uit

Rs = 10 ohms

Cs = 0.47 µF

V D = 80%VDRM

1000 500

1500

400 200 100

50 Hz

2000

2500

3000

5000

ST333C..C Series

Trap ezoid al pulse

tp

TC = 55°C

di/ dt = 100A/ µs

1E2

1E3

1E4

Pulse Basewidth (µs)

1E1

1E2

1E3

1E4

Pulse Basewidth (µs)

Fig. 14 - Frequency Characteristics

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For technical questions, contact: ind-modules@vishay.com

Document Number: 94376

Revision: 30-Apr-08

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