BR211-280 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BR211-280 Datasheet PDF : 7 Pages
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Philips Semiconductors
Breakover diodes
Product specification
BR211 series
20 IT / A
Tj = 25 C
Tj = 150 C
15
10
typ
max
5
01
2
3
4
VT / V
Fig.5. On-state current as a function of on-state
voltage; tp = 200 µs to avoid excessive dissipation.
100 ID / uA
10
max
1
0.1
-40 -20 0
20 40 60 80 100
Tj / C
Fig.6. Maximum off-state current as a function of
temperature.
10 IS / A
1
max
typ
0.1
0.01
min
0.001
-50
0
50
100
150
Tj / C
Fig.7. Switching current as a function of junction
temperature.
10 IH / A
1
min
0.1
0.01
0.001
-50
0
50
100
150
Tj / C
Fig.8. Minimum holding current as a function of
temperature.
Cj / pF
100
BR211-140
typ
BR211-280
10
1
1
10
100
1000
VD / V
Fig.9. Typical junction capacitance as a function of
off-state voltage, f = 1 MHz; Tj = 25˚C.
1000Zth / (K/W)
BR211
100
10
1
PD tp
0.110us
1ms
0.1s
t
10s
1000s
tp / s
Fig.10. Transient thermal impedance. Zth j-a = f(tp).
August 1996
4
Rev 1.200
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