ZXM62P03E6TC(2005) View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
Manufacturer
ZXM62P03E6TC Datasheet PDF : 7 Pages
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ZXM62P03E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS -30
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
IGSS
Gate-Source Threshold Voltage
VGS(th)
-1.0
Static Drain-Source On-State Resistance RDS(on)
(1)
Forward Transconductance (3)
DYNAMIC (3)
gfs
1.1
V
-1 µA
Ϯ100 nA
V
0.15 Ω
0.23 Ω
S
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
VGS=Ϯ20V, VDS=0V
ID=-250µA, VDS= VGS
VGS=-10V, ID=-1.6A
VGS=-4.5V, ID=-0.8A
VDS=-10V,ID=-0.8A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (2) (3)
Ciss
Coss
Crss
330
pF
VDS=-25 V, VGS=0V,
120
pF f=1MHz
45
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
2.8
6.4
13.9
10.3
ns
ns
ns
ns
10.2 nC
1.5 nC
3 nC
VDD =-15V, ID=-1.6A
RG=6.2Ω, RD=25Ω
(Refer to test circuit)
VDS=-24V,VGS=-10V,
ID=-1.6A
(Refer to test circuit)
Diode Forward Voltage (1)
VSD
Reverse Recovery Time (3)
trr
Reverse Recovery Charge(3)
Qrr
(1) Measured under pulsed conditions. Width=300µs. Duty cycle Յ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
19.9
13
-0.95 V
ns
nC
Tj=25°C, IS=-1.6A,
VGS=0V
Tj=25°C, IF=-1.6A,
di/dt= 100A/µs
ISSUE 1 - OCTOBER 2005
4
SEMICONDUCTORS
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