2SB1197KT146R View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
2SB1197KT146R Datasheet PDF : 3 Pages
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Transistors
2SB1197K
zPackaging specifications and hFE
Package
Code
Type
hFE Basic ordering unit (pieces)
2SB1197K QR
Taping
T146
3000
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270 180 to 390
zElectrical characteristic curves
−1000
−500
−200
−100
−50
Ta=25°C
VCE=6V
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
0
−0.4 −0.8 −1.2 −1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
−200
Ta=25°C
−180
−160
−1.0mA
−0.9mA
−0.8mA
−140
−120
−100
−80
−60
−40
−20
0
0
−0.7mA
−0.6mA
−0.5mA
−0.4mA
−0.3mA
−0.2mA
−0.1mA
IB=0mA
−4
−8
−12 −16 −20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( )
−500
−14mA
−16mA
−18mA
−400 −20mA
−300
−12mA −10mA
−8mA
−6mA
−4mA
−200
IB= −2mA
−100
0
Ta=25°C
0
−0.2 −0.4 −0.6 −0.8 −1.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( )
1k
Ta=25°C
500
200
100
VCE= −3V
50
−2V
−1V
20
10
5
2
1
−1m
−10m
−100m
−1
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs.
collector current
−1000
−500
−200
−100
−50
−20
−10
IC/IB=50
20
10
−5
Ta=25°C
−2
−1
−1m
−10m
−100m
−1
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation
voltage vs. collector current
1000
500
200
100
50
20
10
5
Ta=25°C
VCE= −5V
1000
500
200
100
50
20
10
5
Ta=25°C
f=1MHz
IE=0A
Cib
Cob
2
1
1m
Fig.6
10m
100m
1
EMITTER CURRENT : IE (A)
Gain bandwidth product vs.
emitter current
2
1
−0.1
−1
−10
−100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.A
2/2
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