STW13NM60N View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STW13NM60N

N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages

STMicroelectronics 

Electrical characteristics

STF/I/P/U/W13NM60N

Figure 14. Gate charge vs gate-source voltage Figure 15. Capacitance variations

VGS

(V)

VDD=480V

12

VDS

ID=11A

10

AM03305v1

VDS(V)

500

400

#

P&



8

300



6

200

4



2

100

0

0

0

10

20

30 Qg(nC)











!-V

#ISS

#OSS

#RSS

6$36

Figure 16. Normalized gate threshold voltage Figure 17. Normalized on-resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.10

1.00

ID=250µA

AM03306v1

RDS(on)

(norm)

2.1

1.9

1.7

ID=5.5A

AM03307v1

1.5

0.90

1.3

1.1

0.80

0.70

-50 -25 0 25 50 75 100 TJ(°C)

0.9

0.7

0.5

-50 -25 0

25 50 75 100 TJ(°C)

Figure 18. Source-drain diode forward

characteristics

VSD

(V)

TJ=-50°C

AM09290v1

1.2

TJ=25°C

1.0

0.8

TJ=150°C

0.6

0.4

0

2

4

6

8 10 ISD(A)

8/21

Doc ID 15420 Rev 5

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