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Part Name
Description
2SD1508 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SD1508
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
Toshiba
2SD1508 Datasheet PDF : 5 Pages
1
2
3
4
5
30
10
5
3
Tc =
−
50°C
1
25
100
0.5
0.3
V
BE (sat)
– I
C
Common emitter
IC/IB = 1000
0.1
0.003 0.01 0.03
0.1
0.3
1
3
Collector current I
C
(A)
2SD1508
r
th
– t
w
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
100
(2)
10
(1)
1
0.1
0.001 0.01
0.1
1
10
100
1000
Pulse width t
w
(s)
Safe Operating Area
5
IC max (pulsed)*
3
100
μ
s*
IC max (continuous)
1
1 ms*
10 ms*
0.5
DC operation
Tc = 25°C
0.3
*: Single nonrepetitive
0.1
pulse Tc = 25°C
Curves must be derated
0.05
linearly with increase in
temperature.
VCEO max
0.03
0.5 1
3
10
30
100
Collector-emitter voltage V
CE
(V)
4
2009-12-21
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