EBE21FD4AGFD View Datasheet(PDF) - Elpida Memory, Inc
Part Name
Description
Manufacturer
EBE21FD4AGFD Datasheet PDF : 22 Pages
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EBE21FD4AGFD, EBE21FD4AGFN
Byte No.
34
35
36
37
38
39
40
41
Function described
Psi T-A SDRAM at still air
SDRAM DT0
SDRAM DT2Q
SDRAM DT2P
SDRAM DT3N
SDRAM DT4R / mode bit
SDRAM DT5B
SDRAM DT7
Byte value
*3
*3
*3
*3
*3
*3
*3
*3
Hex value
××
××
××
××
××
××
××
××
42 to 78 Reserved
00H
79
FB-DIMM ODT values
150Ω
22H
80
Reserved
00H
81 to 93 AMB personality bytes
××
94 to 97 Reserved
00H
98
AMB junction temperature maximum (TJ (max.))
××
99
Category byte
Planar/FDHS
0AH
100
Reserved
00H
101 to 116 AMB personality bytes
××
117
Module ID: manufacturer’s JEDEC ID code
Elpida Memory
02H
118
Module ID: manufacturer’s JEDEC ID code
Elpida Memory
FEH
119
Module ID: manufacturing location
××
120
Module ID: manufacturing date
Year code (BCD)
××
121
Module ID: manufacturing date
Date code (BCD)
××
122 to 125 Module ID: module serial number
××
126 to 127 Cyclical redundancy code
××
128 to 145 Module part number
EBE21FD4AGFD/N
××
146
Module revision code
Initial
30H
147
Module revision code
(Space)
20H
148
SDRAM manufacturer’s JEDEC ID code
Elpida Memory
02H
149
SDRAM manufacturer’s JEDEC ID code
Elpida Memory
FEH
150
Informal AMB content revision tag (MSB)
××
151
Informal AMB content revision tag (LSB)
××
152 to 175 Manufacturer's specific data
00H
176 to 255 Open for customer use
00H
Remark IDD: DRAM current, ICC: AMB current
Notes: 1. Based on DDR2 SDRAM component specification.
2. Refer to JESD51-3 “Low effective thermal conductivity Test board for leaded surface mount packages”
under JESD51-2 standard.
3. DT parameter is derived as following: DTx = IDDx × VDD × Psi T-A, where IDDx definition is based on
JEDEC DDR2 SDRAM component specification and at VDD=1.9V, it is the datasheet (worst case) value,
and Psi T-A is the programmed value of Psi T-A (value in SPD Byte 33).
Preliminary Data Sheet E0868E30 (Ver. 3.0)
19
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