FHX35LG View Datasheet(PDF) - Fujitsu
Part Name
Description
Manufacturer
FHX35LG Datasheet PDF : 4 Pages
| |||
FHX35X/002
FHX35LG/002
Low Noise HEMT
DESCRIPTION
The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT
(High Electron Mobility Transistor) ones suitable for use as the front end
of an optical receiver in high speed lightwave communication systems.
This HEMT combines high transconductance, low gate capacitance and
low leakage current; all important factors in achieving low noise
preamplification. Fujitsu’s stringent Quality Assurance criteria and
detailed Test Procedures assure Highest Reliabiltity Performance.
FEATURES
• High Transconductance
• Low Leakage Current
• Low Gate Capacitance
• Gold Bonding System
• Proven Reliability
LG PACKAGE
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Thermal Resistance
VDS
VGS
PT
Tstg
Tch
Rth
Channel to Case
Ratings
6
-5
290
-65 to 175
+175
150
Unit
V
V
mW
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Drain Current
Symbol
IDSS
Conditions
VDS=2V, VGS=0V
Min.
15
Transconductance
gm
VDS=2V, IDS=10mA
45
Pinch-off Voltage
Vp
VDS=2V, IDS=1mA
-0.2
Gate-Source Leakage Current IGSO
VGS=-2V
-
Gate-Source Capacitance
CGS
VDS=3V FHX35X/002
IDS=10mA FHX35LG/002
-
-
Gate-Drain Capacitance
CGD
VDS=3V, IDS=10mA
-
Limits
Min.
40
60
-1.0
10
0.27
0.47
0.035
Max. Unit
85 mA
-
mS
-2.0 V
20 nA
-
pF
-
-
pF
Edition 1.1
May 1998
1
Share Link: 