K9K8G08U1M View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K9K8G08U1M

512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

Samsung 

K9K8G08U1M

K9F4G08U0M

Advance

FLASH MEMORY

AC Characteristics for Operation

Parameter

Symbol

Min

Data Transfer from Cell to Register

tR

-

ALE to RE Delay

tAR

10

CLE to RE Delay

tCLR

10

Ready to RE Low

tRR

20

RE Pulse Width

tRP

12

WE High to Busy

tWB

-

Read Cycle Time

tRC

25

RE Access Time

tREA

-

CE Access Time

tCEA

-

RE High to Output Hi-Z

tRHZ

-

CE High to Output Hi-Z

tCHZ

-

RE High to Output Hold

tRHOH

15

RE Low to Output Hold

tRLOH

5

CE High to Output Hold

tCOH

15

RE High Hold Time

tREH

10

Output Hi-Z to RE Low

tIR

0

RE High to WE Low

tRHW

100

WE High to RE Low

tWHR

60

Device Resetting Time(Read/Program/Copy-Back Program/Erase)

tRST

-

NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.

Max

20

-

-

-

-

100

-

18

23

100

30

-

-

-

-

-

-

-

5/10/40/500(1)

Unit

µs

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

µs

12

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