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PZTA64 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
PZTA64
Fairchild
Fairchild Semiconductor 
PZTA64 Datasheet PDF : 3 Pages
1 2 3
PNP Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CES
ICBO
IEBO
Collector-Emitter Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
IC = 100 µA, IB = 0
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
IC = 100 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
30
V
100
nA
100
nA
10,000
20,000
1.5
V
2.0
V
125
MHz
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
50
VCE = 5V
40
30
125 °C
20
25 °C
10
- 40 °C
0
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
1.6
β = 1000
1.2
- 40 ºC
0.8
0.4
25 °C
125 ºC
0
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)

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