2SD1367 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SD1367

Silicon NPN Epitaxial / D1367

Renesas Electronics 

2SD1367

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

20

—

—

V IC = 10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

16

—

—

V IC = 1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

6

—

—

V IE = 10 µA, IC = 0

Collector cutoff current

ICBO

—

—

0.1

µA VCB = 16 V, IE = 0

Emitter cutoff current

IEBO

—

0.1

µA VEB = 5 V, IC = 0

DC current transfer ratio

hFE

250

—

500

VCE = 2 V, IC = 0.1 A, Pulse

Collector to emitter saturation voltage

VCE(sat)

—

0.15 0.3

V IC = 1 A, IB = 0.1 A, Pulse

Base to emitter saturation voltage

VBE(sat)

—

0.9

1.2

V IC = 1 A, IB = 0.1 A, Pulse

Gain bandwidth product

fT

—

100

—

MHz VCE = 2 V, IC = 10 mA

Collector output capacitance

Cob

—

20

—

pF VCB = 10 V, IE = 0, f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 5

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