PBSS5330PAS View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PBSS5330PAS Datasheet PDF : 18 Pages
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NXP Semiconductors
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
10. Characteristics
Table 7.
Symbol
ICBO
ICES
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBEon
td
tr
ton
ts
tf
toff
Characteristics
Parameter
Conditions
collector-base cut-off
current
VCB = -24 V; IE = 0 A; Tamb = 25 °C
VCB = -24 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off VCE = -24 V; VBE = 0 V; Tamb = 25 °C
current
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = -2 V; IC = -0.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -2 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
collector-emitter
saturation voltage
VCE = -2 V; IC = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -2 V; IC = -3 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -0.5 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
collector-emitter
saturation resistance
IC = -1 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -2 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -3 A; IB = -300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter saturation IC = -2 A; IB = -100 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter turn-on
voltage
delay time
rise time
IC = -3 A; IB = -300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -2 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCC = -9 V; IC = -2 A; IBon = -0.1 A;
IBoff = 0.1 A; Tamb = 25 °C
turn-on time
storage time
fall time
turn-off time
PBSS5330PAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2014
Min Typ Max Unit
-
-
-100 nA
-
-
-50 µA
-
-
-100 nA
-
-
-100 nA
200 320 -
175 280 450
140 210 -
100 160 -
-
-45 -70 mV
-
-90 -130 mV
-
-170 -240 mV
-
-230 -320 mV
-
75
107 mΩ
-
-0.89 -1.1 V
-
-0.97 -1.2 V
-
-0.75 -1
V
-
11
-
ns
-
59
-
ns
-
70
-
ns
-
165 -
ns
-
35
-
ns
-
200 -
ns
© NXP Semiconductors N.V. 2014. All rights reserved
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