Part Number : 30F121, GT30F121
Function : 300V IGBT, Plasma Display Panel Applications
Manufacturers : Toshiba
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Features of the Toshiba Discrete IGBTs
IGBT: Insulated Gate Bipolar Transistor
● IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
advantage of high-voltage drive.
● The conductivity modulation characteristics of a bipolar transistor make it ideal for load control
applications that require high breakdown voltage and high current.
● Toshiba offers a family of fast switching IGBTs, which are low injection and recombination in the