MT46V16M8TG-75Z View Datasheet(PDF) - Micron Technology
Part Name
Description
Manufacturer
MT46V16M8TG-75Z Datasheet PDF : 68 Pages
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T0
CK#
CK
COMMAND
WRITE
ADDRESS
Bank a,
Col b
tDQSS (NOM)
DQS
DQ
DM
T1
NOP
tDQSS
DI
b
tDQSS (MIN)
DQS
DQ
DM
tDQSS
DI
b
tDQSS (MAX)
DQS
DQ
DM
tDQSS
DI
b
PRELIMINARY
128Mb: x4, x8, x16
DDR SDRAM
T2 T2n T3
NOP
NOP
DON’T CARE
TRANSITIONING DATA
NOTE: 1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed
order following DI b.
3. An uninterrupted burst of 4 is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
Figure 15
WRITE Burst
128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65 – Rev. C; Pub. 4/01
27
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
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