EN29F002NT-55J View Datasheet(PDF) - Eon Silicon Solution Inc.

Part Name

Description

Manufacturer

EN29F002NT-55J

2 Megabit (256K x 8-bit) Flash Memory

Eon Silicon Solution Inc. 

EN29F002 / EN29F002N

Table 7. DC Characteristics

(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)

Symbol

Parameter

ILI

ILO

ICC1

Input Leakage Current

Output Leakage Current

Supply Current (read) TTL Byte

ICC2

ICC3

ICC4(2)

VIL

VIH

VOL

VOH

VID

ILIT

VLKO

Supply Current (Standby) TTL

Supply Current (Standby) CMOS(1)

Supply Current (Program or Erase)

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage TTL

Output High Voltage CMOS

A9 Voltage (Electronic Signature)

and RESET# Voltage (Temporary

Sector Unprotect)

A9 and RESET# Current (Electronic

Signature)

Supply voltage (Erase and

Program lock-out)

Test Conditions

0V≤ VIN ≤ Vcc

0V≤ VOUT ≤ Vcc

CE# = VIL; OE# = VIH;

f = 6MHz

CE# = VIH

RESET# = CE# = Vcc ± 0.2V

Byte program, Sector or Chip

Erase in progress

IOL = 2 mA

IOH = -2.5 mA

IOH = -100 µA

Min

-0.5

2

2.4

Vcc - 0.4V

10.5

Max

Uni

t

±5

µA

±5

µA

30

mA

1.0

mA

5.0

µA

mA

30

0.8

V

Vcc ± 0.5 V

0.45

V

V

V

11.5

V

A9, RESET# = VID

100

µA

3.2

4.2

V

Notes:

(1) RESET# pin input buffer is always enabled so that it draws power if not at full CMOS supply voltages

4800 Great America Parkway, Suite 202

21

Santa Clara, CA 95054

Rev. C, Issue Date: 2001/07/05

Tel: 408-235-8680

Fax: 408-235-8685

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