1N5828 View Datasheet(PDF) - Naina Semiconductor ltd.

Part Name

Description

Manufacturer

1N5828

Schottky Power Diode, 15A

Naina Semiconductor ltd. 

Naina Semiconductor Ltd.

Features

• Fast Switching

• Low forward voltage drop

• High surge capability

• High efficiency, low power loss

• Normal and Reverse polarity

Schottky Power Diode, 15A

1N5826 thru

1N5828R

DO-203AB (DO-5)

Maximum Ratings (TJ = 25oC, unless otherwise noted)

Parameter

Test Conditions

Repetitive peak reverse voltage

RMS reverse voltage

DC blocking voltage

Continuous forward current

Surge non-repetitive forward

current, half-sine wave

TC ≤ 100oC

TC = 25oC

Forward voltage

Reverse current

IF = 15 A

TJ = 25oC

VR = 20V, TJ = 25oC

VR = 20V, TJ = 125oC

Symbol

VRRM

VRMS

VDC

IF

IFSM

VF

IR

1N5826(R)

20

14

20

15

500

0.45

10

250

1N5827(R)

30

21

30

15

500

0.47

10

250

1N5828(R)

40

28

40

15

Units

V

V

V

A

500

A

0.5

V

10

mA

250

Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)

Parameters

Symbol 1N5826(R)

Maximum thermal resistance, junction to case

Operating junction temperature range

Storage temperature

Rth(JC)

TJ

Tstg

Mounting torque (non-lubricated threads)

F

Approximate allowable weight

W

1N5827(R)

1.8

-65 to 150

-65 to 175

4.0

17.0

1N5828(R)

Units

oC/W

oC

oC

Nm

g

1

D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653

sales@nainasemi.com • www.nainasemi.com

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