1S2075 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

1S2075

Silicon Epitaxial Planar Diode for High Speed Switching

Renesas Electronics 

1S2075(K)

Absolute Maximum Ratings

Item

Peak reverse voltage

Reverse voltage

Peak forward current

Non-Repetitive peak forward surge current

Average rectified current

Power dissipation

Junction temperature

Storage temperature

Note: Within 1s forward surge current.

VRM

VR

IFM

IFSM *

IO

Pd

Tj

Tstg

Symbol

Value

35

30

450

600

100

250

175

−65 to +175

(Ta = 25°C)

Unit

V

V

mA

mA

mA

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Condition

Forward voltage

VF

—

Reverse current

IR

—

Capacitance

C

—

Reverse recovery time trr *

—

Note: Reverse recovery time test circuit

—

0.8

V

IF = 10 mA

—

100

nA VR = 30 V

—

3.5

pF VR = 1 V, f = 1 MHz

—

8.0

ns IF = IR = 10 mA, Irr = 1 mA

DC

Supply

Ro = 50 Ω

Pulse

Generator

0.1 µF

3 kΩ

Sampling

Oscilloscope

Rin = 50 Ω

Trigger

Rev.4.00 Mar 16, 2005 page 2 of 4

Share Link: