2N5605 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2N5605 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N5605
VCBO
Collector-base voltage 2N5607/5609 Open emitter
2N5611
2N5605
VCEO
Collector-emitter voltage 2N5607/5609 Open base
2N5611
VEBO
Emitter-base voltage
Open collector
IC
Collector current
PD
Total power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-80
-100
-120
-60
-80
-100
-5
-5
25
150
-65~150
UNIT
V
V
V
A
W
℃
℃
VALUE
4.37
UNIT
℃/W
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