2N5734 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2N5734 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=15 A;IB=1.5 A
VCEsat-2 Collector-emitter saturation voltage IC=30 A;IB=6 A
VBE
Base-emitter on voltage
IC=15A ; VCE=2V
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=10A ; VCE=2V
hFE-2
DC current gain
IC=20A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=10V
Product Specification
2N5734
MIN TYP. MAX UNIT
80
V
2.0
V
4.0
V
2.7
V
0.1 mA
0.1 mA
30
300
5
30
MHz
2
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