2N5737 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2N5737

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

2N5737

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= -5A; IB= -0.5A

VBE(on) Base-Emitter On Voltage

IC= -4A; VCE= -4V

ICEO

Collector Cutoff Current

VCE= -60V; IB= 0

ICBO

Collector Cutoff Current

VCB= -60V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -5A; VCE= -5V

hFE-2

fT

DC Current Gain

Current-Gain—Bandwidth Product

IC= -10A; VCE= -5V

IC= -0.5A; VCE= -10V

MIN MAX UNIT

-60

V

-0.5

V

-3.0

V

-1.2

V

-1.5

V

-0.5

mA

-0.1

mA

-0.1

mA

20

80

4

10

MHz

isc Website：www.iscsemi.cn

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