2N6258 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2N6258 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N6258
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat Collector-emitter saturation voltge
IC=7.5A ;IB=0.75A
VBEsat Base-emitter saturation voltage
IC=7.5A ;IB=0.75A
ICEO
Collector cut-off current
ICEV
Collector cut-off current
ICBO
Emitter cut-off current
VCE=40V; IB=0
VCE=100V; VBE(off)=1.5V
TC=150℃
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=15A ; VCE=2V
fT
Transition frequency
IC=1A;VCE=10V
MIN TYP. MAX UNIT
80
V
1.0
V
1.3
V
1.0
mA
0.1
5.0
mA
0.1
mA
0.1
mA
20
0.8
MHz
JMnic
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