2N6134 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2N6134 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6132 2N6133 2N6134
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N6132
-40
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6133 IC=-0.1A ;IB=0
-60
V
2N6134
-80
VCEsat
Collector-emitter
saturation voltage
2N6132
2N6133 IC=-7A;IB=-1.2A
2N6134
-1.4
V
-1.8
VBE
Base-emitter on voltage
IC=-2.5A ; VCE=-4V
-1.4
V
ICEV
IEBO
hFE
体 Collector
固电半导 SEMICONDUCTOR cut-off current
2N6132
2N6133
2N6134
VCE=-40V;VBE=1.5V
TC=150℃
VCE=-60V;VBE=1.5V
TC=150℃
VCE=-80V; VBE=1.5V
TC=150℃
Emitter cut-off current
VEB=-5V; IC=0
INCHANG DC current gain
IC=-2.5A ; VCE=-4V
-0.5
-3.0
-0.5
-3.0
-0.5
-3.0
-1.0
20
100
mA
mA
mA
fT
Transition frequency
IC=-0.2A ; VCE=-4V
2.5
MHz
2
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