2N6217 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2N6217

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6216

2N6217

IC=0.1A ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.4A

VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.75A

VBEsat Base-emitter saturation voltage

IC=6A; IB=0.75A

2N6216 VCE=80V; IB=0

ICEO

Collector cut-off current

2N6217 VCE=70V; IB=0

ICBO

Collector cut-off current

VCB=RatedVCBO; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=5A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=10V

Product Specification

2N6216 2N6217

MIN TYP. MAX UNIT

150

V

140

1.2

V

1.6

V

2.0

V

5.0

mA

1.0

mA

1.0

mA

20

80

20

MHz

2

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