2SA1078 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SA1078

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA1078

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=∞

-120

V

V(BR)CBO Collector-base breakdown voltage

IC=-1μA ,IE=0

-120

V

V(BR)EBO Emitter-base breakdown voltage

IE=-1μA ,IC=0

-5

V

VCEsat Collector-emitter saturation voltage IC=-0.7A; IB=-70mA

-0.45 -1.0

V

VBE

Base-emitter on voltage

IC=-0.7A ; VCE=-5V

-0.8 -1.7

V

ICBO

Collector cut-off current

ICEO

Collector cut-off current

VCB=-120V; IE=0

VCE=-120V; IB=0

-1

μA

-100 μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-1

μA

hFE-1

DC current gain

IC=-0.3A ; VCE=-5V

60

350

hFE-2

DC current gain

IC=-0.7A ; VCE=-5V

50

fT

Transition frequency

IC=-0.5A ; VCE=-10V;f=10MHz

140

MHz

COB

Output capacitance

IE=0 ; VCB=-20V;f=1MHz

100

pF

2

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