2SA1110 View Datasheet(PDF) - SavantIC Semiconductor
Part Name
Description
Manufacturer
2SA1110 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1110
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-100µA;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10µA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-0.3A ;IB=-30mA
VBEsat
Base-emitter saturation voltage
IC=-0.3A ;IB=-30mA
hFE-1
DC current gain
IC=-150mA ; VCE=-10V
hFE-2
DC current gain
IC=-0.5A ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-50mA ; VCB=-10V,
MIN TYP. MAX UNIT
-120
V
-5
V
-1.0
V
-1.2
V
65
330
50
100
30
pF
200
MHz
hFE-1 Classifications
P
Q
R
S
65-110 90-155 130-220 185-330
2
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