2SA1738 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SA1738 Datasheet PDF : 3 Pages
| |||
Transistors
2SA1738
Silicon PNP epitaxial planar type
For high speed switching
■ Features
• High speed switching (Pair with 2SC3757)
• Low collector-emitter saturation voltage VCE(sat)
• Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−15
V
Collector-emitter voltage (Base open) VCEO
−15
V
Emitter-base voltage (Collector open) VEBO
−4
V
Collector current
IC
−50
mA
Peak collector current
ICP
−100
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: AK
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = −8 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VEB = −3 V, IC = 0
Forward current transfer ratio
hFE1 * VCE = −1 V, IC = −10 mA
50
hFE2 VCE = −1 V, IC = −1 mA
30
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = −1 mA
Transition frequency
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz 800
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −5 V, IE = 0, f = 1 MHz
− 0.1
− 0.1
150
− 0.1
1 500
1
− 0.2
µA
µA
V
MHz
pF
Turn-on time
Turn-off time
Storage time
ton Refer to the switching time measurement circuit
12
ns
toff
20
ns
tstg
19
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE1
50 to 120
90 to 150
Publication date: November 2002
SJC00026BED
1
Share Link: 