2SA1667 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SA1667 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1667
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.7A; IB=B -0.07A
ICBO
Collector Cutoff Current
VCB= -150V ; IE=0
IEBO
Emitter Cutoff Current
VEB= -6V; IC=0
hFE
DC Current Gain
IC= -0.7A ; VCE= -10V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IE= 0.2A ; VCE= -12V
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= -1A; IB1= -IB2= -0.1A;
VCC= -20V; RL= 20Ω
MIN TYP. MAX UNIT
-150
V
-1.0 V
-10 μA
-10 μA
60
60
pF
20
MHz
0.4
μs
1.5
μs
0.5
μs
isc Website：www.iscsemi.cn
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