SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1718
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-2mA
VBEsat Base-emitter saturation voltage
IC=-2A ; IB=-2mA
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VCB=-100V;IE=0
VEB=-7V;IC=0
IC=-2A ; VCE=-2V
IC=-4A ; VCE=-2V
MIN TYP. MAX UNIT
-100
V
-1.5
V
-2.0
V
-10
µA
-5.0 mA
2000
20000
500
hFE classifications
M
L
K
2000-5000 4000-10000 8000-20000
2