2SA1658 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

Manufacturer

2SA1658

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A

VBE

Base-emitter on voltage

IC=-0.5A ; VCE=-2V

ICBO

Collector cut-off current

VCB=-20V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-0.5A ; VCE=-2V

hFE-2

DC current gain

IC=-2.5A ; VCE=-2V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-2V

‹ hFE-1 Classifications

O

Y

70-140

120-240

Product Specification

2SA1658

MIN TYP. MAX UNIT

-30

V

-0.3 -0.8

V

-0.75 -1.0

V

-1.0 μA

-1.0 μA

70

240

25

40

pF

100

MHz

2

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